Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

被引：30

作者：

Amamou, Walid ^{[1
]}

Lin, Zhisheng ^{[2
]}

van Baren, Jeremiah ^{[2
]}

Turkyilmaz, Serol ^{[3
]}

Shi, Jing ^{[1
,2
]}

Kawakami, Roland K. ^{[1
,2
,4
]}

机构：

[1] Univ Calif Riverside, Program Mat Sci & Engn, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[3] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA

[4] Ohio State Univ, Dept Phys, 174 W 18th Ave, Columbus, OH 43210 USA

来源：

APL MATERIALS | 2016年 / 4卷 / 03期

基金：

美国国家科学基金会;

关键词：

MAGNETIZATION; PRECESSION; INTERFACES;

D O I：

10.1063/1.4943681

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of similar to 20% for MgO and similar to 10% for Al2O3. (C) 2016 Author(s).

引用

页数：9

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