Development of new materials for solar cells in Nagoya Institute of Technology

被引:10
作者
Jimbo, T [1 ]
Soga, T [1 ]
Hayashi, Y [1 ]
机构
[1] Nagoya Inst Technol, Grad Sch Engn, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
solar cell; AlGaAs/Si; heteroepitaxy; amorphous carbon;
D O I
10.1016/j.stam.2004.07.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solar cells with high efficiency and low price have long been desired, however, the commercially available solar cells are still expensive and the efficiencies of them are not high enough yet. A tandem solar cell was fabricated to develop a high-efficiency solar cell, and amorphous carbon solar cells were fabricated to develop a low-price solar cell. An AlGaAs/Si tandem solar cell was successfully fabricated by heteroepitaxial growth of AlGaAs on Si substrate. At first, a p-n junction was formed in Si substrate by the impurity diffusion method. Then, an AlGaAs p-n junction was grown by MOCVD. Since the AlGaAs p-n junction has a graded band gap emitter, the photo-excited minority carriers can be collected efficiently. The energy conversion efficiency of AlGaAs/Si tandem solar cell was 21.4% (AM0) in spite of large lattice mismatch and difference in thermal expansion coefficients between AlGaAs and Si. Solar cells were fabricated by using amorphous carbon films deposited by Ion Beam Sputtering and Pulse Laser Deposition (PLD). The highest efficiency of 1.82% (AM0) was attained with a-C(IBS)/p-C(pyrolysis)/p-Si structure. Solar cells using a-C:H were also fabricated by PLD and Plasma CVD, and the efficiencies of them were 2.1% (AM1.5) and 0.04% (AM0), respectively. Other research activities on solar cells in Nagoya Institute of Technology are briefly mentioned. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:27 / 33
页数:7
相关论文
共 27 条
[1]   Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application [J].
Akahori, K ;
Wang, G ;
Okumura, K ;
Soga, T ;
Jimbo, T ;
Umeno, M .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) :593-598
[2]   Electrical characteristics of GaAs bonded to Si using SeS2 technique [J].
Arokiaraj, J ;
Okui, H ;
Taguchi, H ;
Soga, T ;
Jimbo, T ;
Umeno, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (9AB) :L911-L913
[3]   Effect of thermal cyclic growth on deep levels in AlGaAs/Si heterostructures grown by MOCVD [J].
Baskar, K ;
Soga, T ;
Shao, CL ;
Egawa, T ;
Jimbo, T ;
Umeno, M .
APPLIED SURFACE SCIENCE, 1997, 113 :573-578
[4]   Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition [J].
Baskar, K ;
Soga, T ;
Jimbo, T ;
Umeno, M .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :4112-4115
[5]   GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding [J].
Chandrasekaran, N ;
Soga, T ;
Jimbo, T .
APPLIED PHYSICS LETTERS, 2003, 82 (22) :3892-3894
[6]   Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by rf plasma-enhanced CVD using trimethylboron [J].
Hayashi, Y ;
Ishikawa, S ;
Soga, T ;
Umeno, M ;
Jimbo, I .
DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) :687-690
[7]   Thermal stress relaxation in GaAs layer on new thin Si layer over porous Si substrate grown by metalorganic chemical vapor deposition [J].
Hayashi, Y ;
Agata, Y ;
Soga, T ;
Jimbo, T ;
Umeno, M ;
Sato, N ;
Yonehara, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11B) :L1354-L1357
[8]  
HAYASHI Y, 2004, 14 INT PHOT SCI ENG, P95
[9]   Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application [J].
Imaizumi, M ;
Adachi, M ;
Fujii, Y ;
Hayashi, Y ;
Soga, T ;
Jimbo, T ;
Umeno, M .
JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) :688-692
[10]   A phosphorus doped (n-type) carbon boron doped (p-type) silicon photovoltaic solar cell from a natural source [J].
Krishna, KM ;
Soga, T ;
Jimbo, T ;
Umeno, M .
CARBON, 1999, 37 (03) :531-533