Quasi-lateral 2DEG-2DHG junction in AlGaAs/GaAs

被引：8
作者：
Kaestner, B
Wunderlich, J
Hasko, DG
Williams, DA
机构：
[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
[2] Hitachi Cambridge Lab, Cambridge CB3 0HE, England
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
two-dimensional electron gas; two-dimensional hole gas; negative differential resistance;
D O I：
10.1016/S0026-2692(03)00040-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on an electrical and electroluminescence (EL) investigation of a quasi-lateral two-dimensional electron gas and two-dimensional hole gas junction based on an AlGaAs/GaAs heterostructure. Current bistability is demonstrated, leading to bistability in the EL efficiency. (C) 2003 Elsevier Science Ltd. All rights reserved.
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收藏
页码：423 / 425
页数：3
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