Partial indium solubility induces chemical stability and colossal thermoelectric figure of merit in Cu2Se

被引：313

作者：

Olvera, A. A. ^{[1
]}

Moroz, N. A. ^{[1
]}

Sahoo, P. ^{[1
]}

Ren, P. ^{[2
]}

Bailey, T. P. ^{[2
]}

Page, A. A. ^{[2
]}

Uher, C. ^{[2
]}

Poudeu, P. F. P. ^{[1
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Lab Emerging Energy & Elect Mat, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2017年 / 10卷 / 07期

基金：

美国国家科学基金会;

关键词：

ULTRALOW THERMAL-CONDUCTIVITY; N-TYPE SKUTTERUDITES; SINGLE-CRYSTAL; LARGE ENHANCEMENTS; PERFORMANCE; THERMOPOWER; EFFICIENCY; BETA-CU2SE; MOBILITY; CUSE2;

D O I：

10.1039/c7ee01193h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High thermoelectric figure of merit, ZT similar to 2.1 at 1000 K, have been reported in Cu2-xSe-based materials. However, their deployments in operational devices have been hampered by chemical instability and low average ZT (ZT(ave)) values. Here, we demonstrate improved chemical stability and a record high ZT(ave) similar to 1.5 over a broad temperature range (T <= 850 K) in Cu2Se/CuInSe2 nanocomposites, with ZT values ranging from 0.6 at 450 K to an unprecedentedly large value of 2.6 at 850 K for the sample with 1 mol% In. This remarkable performance is attributed to the localization of Cu+ ions induced by the incorporation of In into the Cu2Se lattice, which simultaneously boost the electrical conductivity and reduce the thermal conductivity of the nanocomposites. These findings pave the way for large-scale utilization of Cu2Se-based materials in thermoelectric generators.

引用

页码：1668 / 1676

页数：9

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