Band offset of the In2S3/indium tin oxide interface measured by X-ray photoelectron spectroscopy

被引：2

作者：

Menon, M. R. Rajesh ^{[1
,3
]}

Mancini, A. ^{[2
]}

Kartha, C. Sudha ^{[3
]}

Vijayakumar, K. P. ^{[3
]}

Santoni, A. ^{[1
]}

机构：

[1] ENEA UTAPRAD MNF, I-00044 Frascati, Italy

[2] ENEA UTFUS COND, I-00044 Frascati, Italy

[3] Cochin Univ Sci & Technol, Dept Phys, Cochin 22, Kerala, India

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 18期

关键词：

Indium sulfide; Band offset; Indium tin oxide; Chemical spray pyrolysis; X-ray photoelectron spectroscopy; X-ray diffraction; ORGANIC SOLAR-CELLS; THIN-FILMS; PHOTOEMISSION-SPECTROSCOPY; SEMICONDUCTOR INTERFACE; DISCONTINUITY; LAYERS; ZNO;

D O I：

10.1016/j.tsf.2012.05.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In2S3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical-chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9 +/- 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 +/- 0.4 eV. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：5856 / 5859

页数：4

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