Band offset of the In2S3/indium tin oxide interface measured by X-ray photoelectron spectroscopy

被引：2
作者：
Menon, M. R. Rajesh [1 ,3 ]
Mancini, A. [2 ]
Kartha, C. Sudha [3 ]
Vijayakumar, K. P. [3 ]
Santoni, A. [1 ]
机构：
[1] ENEA UTAPRAD MNF, I-00044 Frascati, Italy
[2] ENEA UTFUS COND, I-00044 Frascati, Italy
[3] Cochin Univ Sci & Technol, Dept Phys, Cochin 22, Kerala, India
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 18期
关键词：
Indium sulfide; Band offset; Indium tin oxide; Chemical spray pyrolysis; X-ray photoelectron spectroscopy; X-ray diffraction; ORGANIC SOLAR-CELLS; THIN-FILMS; PHOTOEMISSION-SPECTROSCOPY; SEMICONDUCTOR INTERFACE; DISCONTINUITY; LAYERS; ZNO;
D O I：
10.1016/j.tsf.2012.05.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In2S3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical-chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9 +/- 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 +/- 0.4 eV. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：5856 / 5859
页数：4
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