Quasi-horizontal GaN nanowire array network grown by sublimation sandwich technique

被引:7
作者
Jian, J. K. [1 ,2 ]
Wang, Cong [1 ]
Lei, M. [2 ]
Zhang, Z. H. [2 ]
Wang, T. M. [1 ]
Chen, X. L. [2 ]
机构
[1] Beihang Univ, Ctr Condensed Matter & Mat Phys, Sch Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Nanoscale Phys & Device Lab, Beijing 100080, Peoples R China
关键词
nanostructures; chemical vapor deposition processes; semiconducting III-Vmaterials;
D O I
10.1016/j.apsusc.2008.04.048
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Quasi-horizontal GaN nanowire array network has been grown on Au-film-coated MgO substrates via a sublimation sandwich technique. These GaN nanowire arrays principally grew along two directions which were perpendicular to each other and nearly parallel to the substrate, forming a regular network. The formation of the nanowire network was a hetero-epitaxial vapor -liquid -solid (VLS) process assisted by Au catalysts and was dependent on the substrates. Transmission electron microscopy revealed that the nanowires were single-crystalline wurtzite GaN. Raman scattering spectrum of the nanowire network presented some new features. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:6637 / 6641
页数:5
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