The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)

被引：47

作者：

Yi, Hemian ^{[1
,2
]}

Komesu, Takashi ^{[3
,4
]}

Gilbert, Simeon ^{[3
,4
]}

Hao, Guanhua ^{[3
,4
]}

Yost, Andrew J. ^{[3
,4
]}

Lipatov, Alexey ^{[5
]}

Sinitskii, Alexander ^{[5
]}

Avila, Jose ^{[1
,2
]}

Chen, Chaoyu ^{[1
,2
]}

Asensio, Maria C. ^{[1
,2
]}

Dowben, P. A. ^{[3
,4
]}

机构：

[1] Synchrotron SOLEIL, BP48, F-91190 St Aubin, France

[2] Univ Paris Saclay, BP48, F-91190 St Aubin, France

[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[4] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[5] Univ Nebraska, Dept Chem, Hamilton Hall 629, Lincoln, NE 68588 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 05期

基金：

美国国家科学基金会;

关键词：

TITANIUM TRISULFIDE TIS3; GRAPHENE NANORIBBONS; QUANTUM-TRANSPORT; SINGLE-LAYER; THIN-FILMS; TRANSISTORS; XPS; NANOTUBES; ZRSE3; EDGE;

D O I：

10.1063/1.5020054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The experimental mapping of the band structure of TiS3(001), by momentum resolution nanospot angle resolved photoemission, is presented. The experimental band structure, derived from angle-resolved photoemission, confirms that the top of the valence band is at the center of the Brillouin zone. This trichalcogenide has a rectangular surface Brillouin zone where the effective hole mass along the chain direction is -0.95 +/- 0.09m(e), while perpendicular to the chain direction, the magnitude of the effective hole mass is much lower at -0.37 +/- 0.1m(e). The placement of the valence band well below the Fermi level suggests that this is an n-type semiconductor. Published by AIP Publishing.

引用

页数：4

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