Enhanced thermoelectric performance of La-doped BiCuSeO by tuning band structure

被引:99
作者
Liu, Yaochun [1 ,2 ]
Ding, Jingxuan [1 ]
Xu, Ben [1 ]
Lan, Jinle [3 ,4 ]
Zheng, Yuanhua [1 ]
Zhan, Bin [1 ]
Zhang, Boping [2 ]
Lin, Yuanhua [1 ]
Nan, Cewen [1 ]
机构
[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Univ Sci & Technol, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[3] Beijing Univ Chem Technol, State Key Lab Organ Inorgan Composites, Beijing 100029, Peoples R China
[4] Beijing Univ Chem Technol, Changzhou Inst Adv Mat, Changzhou 213164, Jiangsu, Peoples R China
关键词
ELECTRONIC-STRUCTURES; CONDUCTIVITY; OXYSELENIDES; SYSTEM; TE; SE; CH;
D O I
10.1063/1.4922492
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bi1-xLaxCuSeO ceramic bulks have been prepared by the spark plasma sintering method. Our results indicate that La-doping can lead to an obvious change of the band structure evidenced by the absorption spectra and electric transportation behaviors (e.g., m* and Seebeck coefficient). The variation of band structure results in a great enhancement of carrier mobility caused by a decreased energy offset between the primary and secondary valence bands. A maximum ZT value of 0.74 can be obtained in 8% La-doped BiCuSeO sample at 923 K, which is 37% higher than that of the pure BiCuSeO bulk. Our results reveal that band engineering is an effective way to enhance the thermoelectric properties of BiCuSeO system. (C) 2015 AIP Publishing LLC.
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页数:5
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