Investigation of dispersion parameters, dielectric properties and opto-electrical parameters of ZnO thin film grown by ALD

被引:42
作者
Zaka, Hanaa [1 ,2 ]
Parditka, B. [1 ]
Erdelyi, Z. [1 ]
Atyia, H. E. [2 ]
Sharma, Pankaj [3 ]
Fouad, S. S. [2 ]
机构
[1] Univ Debrecen, Dept Solid State Phys, Fac Sci & Technol, POB 400, H-4002 Debrecen, Hungary
[2] Ain Shams Univ, Dept Phys, Fac Educ, Cairo 11566, Egypt
[3] Jaypee Univ Informat Technol, Dept Phys & Mat Sci, Waknaghat 173234, India
来源
OPTIK | 2020年 / 203卷
关键词
ZnO; ALD; Thin films; Opto-electrical parameters; Direct optical band gap; ZINC-OXIDE NANOSTRUCTURES; OPTICAL-PROPERTIES; TEMPERATURE; SUBSTRATE; THICKNESS; ARRAYS;
D O I
10.1016/j.ijleo.2019.163933
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Highly transparent zinc oxide thin films with varied layer thicknesses have been prepared on microscopic glass substrates at 200 degrees C. Films thickness was measured by stylus profilometer. The films have been investigated for their structure using X-Ray diffraction; the patterns showed their amorphous nature. The dispersion parameters i.e. refractive index (n) and extinction coefficient (k) are computed in the wavelength range (350-2500 nm). The Tauc model was used to determine the optical band gap and Urbach tail with direct allowed transitions. The real and imaginary parts of the high frequency dielectric constant were discussed. Other parameters such as penetration depth, cut-off wavelength, dissipation factor, volume and surface energy loss functions, reflection loss factor, optical, electrical and thermal conductivities have also been determined. A systematic study of a wide range of optical parameters of ALD prepared ZnO films can serve as a valuable data source and can enrich the knowledge of the studied material.
引用
收藏
页数:9
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