Novel vertical channel double gate structures for high density and low power flash memory applications

被引：6

作者：

Huang Ru ^{[1
]}

Zhou FaLong ^{[1
]}

Cai YiMao ^{[1
]}

Wu DaKe ^{[1
]}

Zhang Xing ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES | 2008年 / 51卷 / 06期

关键词：

double gate devices; flash memory; high density; low power;

D O I：

10.1007/s11432-008-0075-4

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The flash memory technology meets physical and technical obstacles in further scaling. New structures and new materials are implemented as possible solutions. This paper focuses on two kinds of new flash cells for high density and low power memory applications based on the vertical channel double gate structure. The proposed VD-NROM with dual-nitride-trapping-layer and vertical structure can achieve four-bit-per-cell storage capability. And the proposed VSAS-FG cell benefits the high programming efficiency, low power and high density capability, which can be realized without any additional mask and can achieve the self-alignment of the split-gate channel and the floating-gate. The two novel flash cell structures can be considered as potential candidates for different flash memory applications.

引用

页码：799 / 806

页数：8

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