Determination of a Safe Distance for Atomic Hydrogen Depositions in Hot-Wire Chemical Vapour Deposition by Means of CFD Heat Transfer Simulations

被引:6
作者
Fourie, Lionel Fabian [1 ]
Square, Lynndle [2 ]
机构
[1] Univ Western Cape, Dept Phys & Astron, ZA-7535 Bellville, South Africa
[2] North West Univ, Dept Phys, ZA-2520 Potchefstroom, South Africa
来源
FDMP-FLUID DYNAMICS & MATERIALS PROCESSING | 2020年 / 16卷 / 02期
基金
新加坡国家研究基金会;
关键词
Heat transfer; HWCVD; OpenFOAM; atomic hydrogen; CVD; TEMPERATURE;
D O I
10.32604/fdmp.2020.08771
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A heat transfer study was conducted, in the framework of Computational Fluid Dynamics (CFD), on a Hot-Wire Chemical Vapour Deposition (HWCVD) reactor chamber to determine a safe deposition distance for atomic hydrogen produced by HWCVD. The objective of this study was to show the feasibility of using heat transfer simulations in determining a safe deposition distance for deposition of this kind. All CFD simulations were set-up and solved within the framework of the CFD packages of OpenFOAM namely; snappyHexMesh for mesh generation, buoyantSimpleFoam and rhoSimpleFoam as the solvers and paraView as the post-processing tool. Using a standard set of deposition parameters for the production of atomic hydrogen by HWCVD, plots of the gas temperature in the deposition region were produced. From these plots, we were able to determine a safe deposition distance in the HWCVD reactor to be in the range between 3 and 4 cm from the filament.
引用
收藏
页码:225 / 235
页数:11
相关论文
共 14 条
  • [1] Atluri SN, 2003, CMES-COMP MODEL ENG, V4, P507
  • [2] Greenshields C., 2016, COMPUTATIONAL FLUID
  • [3] Development of Cat-CVD apparatus - a method to control wafer temperatures under thermal influence of heated catalyzer
    Karasawa, M
    Masuda, A
    Ishibashi, K
    Matsumura, H
    [J]. THIN SOLID FILMS, 2001, 395 (1-2) : 71 - 74
  • [4] The influence of filament temperature on crystallographic properties of poly-Si films prepared by the hot-wire CVD method
    Lee, JC
    Kang, KH
    Kim, SK
    Yoon, KH
    Song, J
    Park, IJ
    [J]. THIN SOLID FILMS, 2001, 395 (1-2) : 188 - 193
  • [5] Formation of silicon-based thin films prepared by catalytic chemical vapor deposition (Cat-CVD) method
    Matsumura, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A): : 3175 - 3187
  • [6] Cat-CVD process and its application to preparation of Si-based thin films
    Matsumura, H
    Masuda, A
    Izumi, A
    [J]. AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 67 - 78
  • [7] Nozaki F., 2016, BUOYANTPIMPLEFOAM BU
  • [8] Rahman U. A., 2015, INT C MECH IND ENG F
  • [9] Hot-wire CVD growth simulation for thickness uniformity
    Sali, JV
    Patil, SB
    Jadkar, SR
    Takwale, MG
    [J]. THIN SOLID FILMS, 2001, 395 (1-2) : 66 - 70
  • [10] Comparison of surface passivation of crystalline silicon by a-Si:H with and without atomic hydrogen treatment using hot-wire chemical vapor deposition
    Schuettauf, J. W. A.
    van der Werf, C. H. M.
    van Sark, W. G. J. H. M.
    Rath, J. K.
    Schropp, R. E. I.
    [J]. THIN SOLID FILMS, 2011, 519 (14) : 4476 - 4478