Impurity and phonon-limited electron mobilities in ⟨110⟩-oriented silicon nanowires

被引:0
|
作者
Niquet, Y. M. [1 ]
Persson, M. [1 ]
Mera, H. [1 ]
Zhang, W. [2 ,3 ]
Delerue, C. [2 ]
Allan, G. [2 ]
Diarra, M. [2 ]
Wang, E. [4 ]
机构
[1] CEA UJF, INAC, Sim SP2M L, F-38054 Grenoble 9, France
[2] IEMN, Dept ISEN, F-59046 Lille, France
[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condens Matter Phys, Beijing 100190, Peoples R China
[4] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
来源
2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年
关键词
TRANSPORT;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We discuss impurity-and phonon-limited electron mobilities in < 110 >-oriented silicon nanowires. We show that (1) boron acceptors behave as tunnel barriers for the electrons, while phosphorous donors behave as quantum wells giving rise to Fano resonances in the transmission; (2) As a consequence, the room-temperature mobility is typically much larger in P-doped than in B-doped nanowires; (3) In particular, the mobility can be strongly hindered by acceptors in Si nanowires embedded in SiO2; (4) On the opposite, the impurity-limited mobility can increase with decreasing nanowire diameter in gate-all-around nanowires with high-kappa oxides, due to both the efficient screening of the impurity potential and band structure effects; and (5) the electron-phonon coupling is enhanced in small nanowires and is the dominant scattering mechanism at room temperature for impurity concentrations up to a few 10(18) cm(-3).
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页码:13 / 16
页数:4
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