InSb based quantum dot nanostructures for mid-infrared photonic devices

被引：1
作者：
Carrington, P. J. [1 ]
Repiso, E. [2 ]
Lu, Q. [2 ]
Fujita, H. [2 ,3 ]
Marshall, A. R. J. [2 ]
Zhuang, Q. [2 ]
Krier, A. [2 ]
机构：
[1] Univ Lancaster, Dept Engn, Lancaster LA1 4YW, England
[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[3] Asahi Kasei Corp, 2-1 Samejima, Fuji, Shizuoka 4168501, Japan
来源：
NANOPHOTONIC MATERIALS XIII | 2016年 / 9919卷
关键词：
Mid-infrared; Quantum Dots; InSb; Molecular beam epitaxy; Photoluminescence;
D O I：
10.1117/12.2236869
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Novel InSb quantum dot (QD) nanostructures grown by molecular beam epitaxy (MBE) are investigated in order to improve the performance of light sources and detectors for the technologically important mid-infrared (2-5 mu m) spectral range. Unlike the InAs/GaAs system which has a similar lattice mismatch, the growth of InSb/InAs QDs by MBE is a challenging task due to Sb segregation and surfactant effects. These problems can be overcome by using an Sb-As exchange growth technique to realize uniform, dense arrays (dot density similar to 10(12) cm(-2)) of extremely small (mean diameter similar to 2.5 nm) InSb submonolayer QDs in InAs. Light emitting diodes (LEDs) containing ten layers of InSb QDs exhibit bright electroluminescence peaking at 3.8 mu m at room temperature. These devices show superior temperature quenching compared with bulk and quantum well (QW) LEDs due to a reduction in Auger recombination. We also report the growth of InSb QDs in InAs/AlAsSb 'W' QWs grown on GaSb substrates which are designed to increase the electron-hole (e-h) wavefunction overlap to similar to 75%. These samples exhibit very good structural quality and photoluminescence peaking near 3.0 mu m at low temperatures.
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页数：6
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