Magnetic Imaging of Domain Walls in the Antiferromagnetic Topological Insulator MnBi2Te4

被引:78
|
作者
Sass, Paul M. [1 ]
Ge, Wenbo [1 ]
Yan, Jiaqiang [2 ]
Obeysekera, D. [3 ]
Yang, J. J. [3 ]
Wu, Weida [1 ]
机构
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
[3] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA
关键词
Domain walls; Antiferromagnetic topological insulator; magnetic force microscopy; spin flop transition; PHASE;
D O I
10.1021/acs.nanolett.0c00114
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi2Te4 family, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependence. The direct visualization of these domain walls and domain structures in the magnetic field will not only facilitate the exploration of intrinsic topological phenomena in antiferromagnetic topological insulators but will also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.
引用
收藏
页码:2609 / 2614
页数:6
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