Binding energy of shallow impurities in a polar quantum well wire

被引:22
作者
Bouhassoune, M
Charrour, R
Fliyou, M
Bria, D
Nougaoui, A
机构
[1] Univ Mohammed 1, Fac Sci, Lab Dynam & Opt Mat, Oujda 60000, Morocco
[2] ENS, Equipe Phys Solide, Bensouda, Fes, Morocco
关键词
shallow impurity; phonon; quantum well wire; binding energy; renormalized effective mass;
D O I
10.1016/S0921-4526(01)00391-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The binding energy of an on-center donor impurity in cylindrical quantum well wire is investigated, The calculation is made within the effective mass approximation and using a variational approach. The electronic confinement was modeled by a finite deep potential well. The interaction of the charge carriers (electron and ion) with both the confined LO and SO phonons has been considered. Our results show that the binding energy and the electron effective mass depend on the size of the wire, the height of the potential barrier and the polaronic corrections. Furthermore, for a thin wire the binding energy depends also on the variation of the electron effective mass at the edge of the wire. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:389 / 397
页数:9
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