Preparation of polycrystalline HgI2 films by PVD method under ultrasonic wave

被引：1

作者：

Zheng, Yaoming ^{[1
]}

Shi, Weimin ^{[1
]}

Wei, Guangpu ^{[1
]}

Qin, Juan ^{[1
]}

Chen, Sheng ^{[1
]}

Wang, Linjun ^{[1
]}

Xia, Yiben ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

来源：

THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE | 2008年 / 6984卷

关键词：

polycrystalline HgI2; ultrasonic wave; physical vapor deposition;

D O I：

10.1117/12.792378

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Highly oriented polycrystalline alpha-HgI2 thick films are fabricated by physical vapor deposition method under the conditions of 59KHz ultrasonic wave and relatively lower source temperature of 80 degrees C. The ultrasonic wave is used in the process of physical vapor deposition films preparation for the first time. With the effect of ultrasonic wave, the film quality and the growth rate can be obviously improved. The growth mechanism as well as impacts of ultrasonic wave is also discussed.

引用

页数：5

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