Nitrile Substitution Effect on Triphenodioxazine-Based Materials for Liquid-Processed Air-Stable n-Type Organic Field Effect Transistors

被引：28

作者：

Gruntz, Guillaume ^{[1
]}

Lee, Hyunbok ^{[2
]}

Hirsch, Lionel ^{[3
]}

Castet, Frederic ^{[1
]}

Toupance, Thierry ^{[1
]}

Briseno, Alejandro L. ^{[2
]}

Nicolas, Yohann ^{[1
]}

机构：

[1] Univ Bordeaux, Inst Mol Sci, F-33405 Talence, France

[2] Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA

[3] Univ Bordeaux, ENSCBP, UMR CNRS 5218, Lab Integrat Mat Syst, F-33607 Pessac, France

来源：

ADVANCED ELECTRONIC MATERIALS | 2015年 / 1卷 / 06期

关键词：

THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; FUNCTIONALIZED PENTACENE; ELECTRON-MOBILITY; MOLECULAR DESIGN; SOLAR-CELLS; SEMICONDUCTORS; CHANNEL; STABILITY; CIRCUITS;

D O I：

10.1002/aelm.201500072

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Air-stable material for vacuum or liquid-processed n-type organic field-effect transistors is easily synthesized by cyano-substitutions on para and ortho positions versus nitrogen of soluble triphenodioxazines. This regioisomer promotes favorable molecular packing while increasing the electron affinity. Without encapsulation and after 30 days, the performances of devices remain high under air measurement conditions.

引用

页数：6

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