Dark excitons in transition metal dichalcogenides

被引:183
作者
Malic, Ermin [1 ]
Selig, Malte [2 ]
Feierabend, Maja [1 ]
Brem, Samuel [1 ]
Christiansen, Dominik [2 ]
Wendler, Florian [2 ]
Knorr, Andreas [2 ]
Berghaeuser, Gunnar [1 ]
机构
[1] Chalmers Univ Technol, Dept Phys, Gothenburg, Sweden
[2] Tech Univ Berlin, Inst Theoret Phys, Berlin, Germany
基金
瑞典研究理事会;
关键词
SEMICONDUCTORS;
D O I
10.1103/PhysRevMaterials.2.014002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative position of these dark states with respect to the optically accessible bright excitons has a crucial impact on the emission efficiency of these materials and thus on their technological potential. Based on the solution of the Wannier equation, we present the excitonic landscape of the most studied TMD materials including the spectral position of momentum- and spin-forbidden excitonic states. We show that the knowledge of the electronic dispersion does not allow to conclude about the nature of the material's band gap since excitonic effects can give rise to significant changes. Furthermore, we reveal that an exponentially reduced photoluminescence yield does not necessarily reflect a transition from a direct to a nondirect gap material, but can be ascribed in most cases to a change of the relative spectral distance between bright and dark excitonic states.
引用
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页数:7
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