Transient observation of extended x-ray absorption fine structure in laser-melted Si by using femtosecond laser-produced-plasma soft x ray

被引：17

作者：

Oguri, K ^{[1
]}

Okano, Y ^{[1
]}

Nishikawa, T ^{[1
]}

Nakano, H ^{[1
]}

机构：

[1] NTT COrp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 01期

关键词：

D O I：

10.1063/1.1989445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the time-resolved measurement of the extended x-ray absorption fine structure (EXAFS) in laser-melted Si foil by using a pump-probe absorption spectroscopy system that utilizes a femtosecond laser-produced-plasma soft x-ray source. By using 100-fs laser irradiation, we observed the transient change in the Si L-edge EXAFS, that is, a slight shortening of its oscillation period and a decrease in its oscillation amplitude. This result suggests that the Si-Si atomic distance expanded and structural disordering occurred as a result of the production of liquid Si. (c) 2005 American Institute of Physics.

引用

页数：3

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