A 95-GHz InP HEMT MMIC amplifier with 427-mW power output

被引：46

作者：

Chen, YC ^{[1
]}

Ingram, DL ^{[1
]}

Lai, R ^{[1
]}

Barsky, M ^{[1
]}

Grunbacher, R ^{[1
]}

Block, T ^{[1
]}

Yen, HC ^{[1
]}

Streit, DC ^{[1
]}

机构：

[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 11期

关键词：

D O I：

10.1109/75.736259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeterwave high-power applications, A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-mu m gate length and 1.28-mm output periphery fabricated using this process has demonstrated an output power of 427 mW with 19% power-added efficiency at 95 GHz, To our knowledge, this is the highest output power ever reported at this frequency for any solid-state MMIC amplifier.

引用

页码：399 / 401

页数：3

共 14 条

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