Growth and oxidation of ultra-thin Al films on the Re(0001) surface

被引：59
|
作者：
Wu, YT
Garfunkel, E
Madey, TE
机构：
[1] RUTGERS STATE UNIV,DEPT CHEM,PISCATAWAY,NJ 08855
[2] RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08855
[3] RUTGERS STATE UNIV,SURFACE MODIFICAT LAB,PISCATAWAY,NJ 08855
来源：
SURFACE SCIENCE | 1996年 / 365卷 / 02期
关键词：
aluminium; aluminium oxide; insulating films; low energy ion scattering (LEIS); metal-insulator interfaces; X-ray photoelectron spectroscopy;
D O I：
10.1016/0039-6028(96)00699-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth and oxidation of ultra-thin Al films on the Re (0001) surface are studied by X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS) and high resolution electron energy loss spectroscopy (HREELS). The first monolayer of Al grows in a two-dimensional fashion and almost completely covers the Re(0001) substrate at 300 K. Al films of thickness <15 Angstrom are oxidized by annealing to 970 K in 1 x 10(-4) Torr oxygen to form stoichiometric aluminium oxide films. LEIS results show that the oxide films formed at 970 K cover the substrate completely. Hexagonal LEED patterns are observed from the aluminium oxide films, consistent with ordered structures similar to those of crystalline alpha- or gamma-Al2O3. The XPS Al 2s and O 1s binding energies of the aluminium oxide films increase as a function of the film thickness; this thickness-dependent shift may be related to Schottky barrier formation at the Al2O3/Re interface.
引用
收藏
页码：337 / 352
页数：16
相关论文
共 50 条
  • [21] Simulation on multiple cluster growth in ultra-thin films
    Wang, Xiao-Ping
    Zhao, Te-Xiu
    Wu, Feng-Min
    Lin, Gang
    Wu, Zi-Qin
    Wuli Xuebao/Acta Physica Sinica, 1999, 48 (08): : 1418 - 1419
  • [22] Growth and characterization of nickel oxide ultra-thin films
    El Boujlaidi, Abdelaziz
    Rochdi, Nabil
    Tchalala, Rachid
    Enriquez, Hanna
    Mayne, Andrew J.
    Oughaddou, Hamid
    SURFACES AND INTERFACES, 2020, 18
  • [23] Simulation on multiple cluster growth in ultra-thin films
    Wang, XP
    Zhao, TX
    Wu, FM
    Lin, G
    Wu, ZQ
    ACTA PHYSICA SINICA, 1999, 48 (08) : 1412 - 1419
  • [24] Growth of Ultra-Thin MnSi Films on Si(111) Surface: Monte Carlo Simulation
    Kocan, Pavel
    Higashi, Shougo
    Tochihara, Hiroshi
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2008, 6 : 276 - 280
  • [25] Growth modes and electronic properties of copper ultra-thin films on a V(100) surface
    Valla, T
    Pervan, P
    Milun, M
    Wandelt, K
    SURFACE SCIENCE, 1997, 374 (1-3) : 51 - 60
  • [26] Heteroepitaxial growth and surface structure of L10-MnGa(111) ultra-thin films on GaN(0001) (vol 103, 161606, 2013)
    Mandru, Andrada-Oana
    Garcia Diaz, Reyes
    Wang, Kangkang
    Cooper, Kevin
    Haider, Muhammad
    Ingram, David C.
    Takeuchi, Noboru
    Smith, Arthur R.
    APPLIED PHYSICS LETTERS, 2014, 105 (13)
  • [27] Role and behavior of ultra-thin gold films on the fiber materials surface in the CO oxidation process
    Lukiyanchuk, I., V
    Vasilyeva, M. S.
    Sergeev, A. A.
    Nepomnyashchii, A., V
    Serov, M. M.
    Krit, B. L.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 852
  • [28] Surface structure of ultra-thin Al2O3 films on metal substrates
    Lee, MB
    Lee, JH
    Frederick, BG
    Richardson, NV
    SURFACE SCIENCE, 2000, 448 (2-3) : L207 - L212
  • [29] Growth of ultra-thin amorphous Al2O3 films on CoAl(100)
    Rose, V
    Podgursky, V
    Costina, I
    Franchy, R
    SURFACE SCIENCE, 2003, 541 (1-3) : 128 - 136
  • [30] Growth and morphology of ultra-thin Al films on liquid substrates studied by atomic force microscopy
    Fang, Zheng-Nong
    Yang, Bo
    Chen, Miao-Gen
    Zhang, Chu-Hang
    Xie, Jian-Ping
    Ye, Gao-Xiang
    THIN SOLID FILMS, 2009, 517 (11) : 3408 - 3411
12345