Design of bandgap reference circuits in a 65 nm CMOS technology for HL-LHC applications

被引：2

作者：

Traversi, G. ^{[1
,3
]}

De Canio, F. ^{[2
,3
]}

Gaioni, L. ^{[1
]}

Manghisoni, M. ^{[1
,3
]}

Ratti, L. ^{[2
,3
]}

Re, V. ^{[1
,3
]}

机构：

[1] Univ Bergamo, Dalmine, BG, Italy

[2] Univ Pavia, I-27100 Pavia, Italy

[3] Ist Nazl Fis Nucl, I-27100 Pavia, Italy

来源：

JOURNAL OF INSTRUMENTATION | 2015年 / 10卷

关键词：

VLSI circuits; Analogue electronic circuits;

D O I：

10.1088/1748-0221/10/02/C02004

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This work is concerned with the design and characterization of bandgap reference circuits capable of operating with a power supply of 1.2 V in view of applications to HL-LHC experiments. Due to the harsh environment foreseen for these devices, different solutions have been considered and implemented in a 65 nm CMOS technology. Together with a conventional structure which exploits bipolar devices, a smaller solution based on pn diodes and a version with MOS transistors biased in weak inversion region are included. This paper intends to describe and compare the features of the different circuits designed.

引用

页数：9

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