Effects of nitrogen substitutional doping on the electronic transport of carbon nanotube

被引：39

作者：

Wei, Jianwei ^{[1
]}

Hu, Huifang ^{[1
]}

Zeng, Hui ^{[1
]}

Zhou, Zhipeng ^{[1
]}

Yang, Welwei ^{[1
]}

Peng, Ping ^{[2
]}

机构：

[1] Hunan Univ, Coll Phys & Microelect Sci, Changsha 410082, Peoples R China

[2] Hunan Univ, Dept Mat Sci & Engn, Changsha 410082, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 03期

基金：

中国国家自然科学基金;

关键词：

nanotube; doping; nitrogen; transport;

D O I：

10.1016/j.physe.2007.06.060

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the effects of nitrogen substitutional doping on the transport properties of single-wall carbon nanotube (8, 0) using density functional theory and non-equilibrium Green's functions. The results reveal that the nanotube changes from the semiconducting to the quasi-metallic state because of the dopants, and their structures strongly dominate their electrical properties. Our calculations indicate that transport properties of the doped nanotubes are sensitive not only to the concentration of nitrogen atoms but also to their distribution. The doping effects on the electronic transport of the carbon nanotube are discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：462 / 466

页数：5

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