Role of carbon in enhancing the performance of MgB2 superconductor

被引：15
作者：
Awana, V. P. S. [1 ,2 ]
Vajpayee, Arpita [1 ]
Mudgel, Monika [1 ]
Rawat, Rajeev [3 ]
Acharya, Somobrata [3 ]
Kishan, H. [1 ]
Takayama-Muromachi, E. [4 ]
Narlikar, A. V. [2 ]
Felner, I. [5 ]
机构：
[1] Natl Phys Lab, New Delhi 110012, India
[2] ICYS, Ctr Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[3] Consortium Sci Res, UGC DAE, Indore 452017, Madhya Pradesh, India
[4] Natl Inst Mat Sci, Adv Nano Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[5] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2007年 / 467卷 / 1-2期
关键词：
MgB2; superconductor; nano-particle doping; flux pinning; critical current density;
D O I：
10.1016/j.physc.2007.08.011
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The enhancement of the critical current density (J(c)(H)) of carbon and nano-SiC doped MgB2 is presented and compared. The upper critical field (H-c2) being determined from resistivity under magnetic field experiments is though improved for both C substitution and nano-SiC addition the same is more pronounced for the former. In MgB2-xCx carbon is substituted for boron that induces disorder in the boron network and acts as internal pinning centres. The optimal J(c)(H) values are obtained for x = 0.1 sample. In case of nano-SiC doped in MgB2, the J(c)(H) improves more profoundly and two simultaneous mechanisms seems responsible to this enhancement. Highly reactive nano-SiC releases free carbon atom, which gets easily incorporated into the MgB2 lattice to act as intrinsic pinning centres. Further enhancement is observed for higher nano-SiC concentrations, where the un-reacted components serve as additional extrinsic pinning centres. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：67 / 72
页数：6
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