Effect of Si on near-infrared long persistent phosphor Zn3Ga2Ge2-x Si x O10:2.5 %Cr3+

被引：9

作者：

Shen, Fengjuan ^{[1
,2
]}

Deng, Chaoyong ^{[1
]}

Wang, Xu ^{[1
]}

Zhang, Chi ^{[1
]}

Liu, Wei ^{[1
]}

机构：

[1] Guizhou Univ, Dept Elect Sci, Coll Big Data & Informat Engn, Guiyang 550025, Guizhou, Peoples R China

[2] ChongQing Univ Arts & Sci, Sch Elect & Elect Engn, Chongqing 402160, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 09期

关键词：

LUMINESCENCE;

D O I：

10.1007/s10854-016-4940-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced long persistent near-infrared phosphors Zn3Ga2Ge2-xSixO10:2.5 %Cr3+ (x = 0, 0.6, 1, 1.4, 2) were synthesized by solid-state reaction method. The duration of afterglow can last more than 30 h after stoppage of the 365 nm ultraviolet light irradiation. Specifically, Si4+ substituting Ge4+ can increase the afterglow time but attenuate light emission intensity by introducing deep level of traps. We discussed the mechanism to balance the persistent luminescence intensity and afterglow time, which has significant potential for applications and future research of super long bright persistent luminescence phosphors.

引用

页码：9067 / 9072

页数：6

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