Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

被引：4

作者：

Cha, Kyu Man ^{[1
]}

Horiuchi, Isao ^{[1
]}

Shibata, Kenji ^{[1
]}

Hirakawa, Kazuhiko ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[3] CREST JST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 08期

基金：

日本学术振兴会;

关键词：

SINGLE-PHOTON SOURCES; LITHOGRAPHY; SYSTEM;

D O I：

10.1143/APEX.5.085501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the site-controlled growth of InAs quantum dots (QDs) by using atomic-force-microscope (AFM)-assisted anodic oxidation. It is found that the morphology of the site-controlled QDs strongly depends on the growth temperature, T-g; when QDs are grown at T-g <= 480 degrees C, the obtained QDs are much larger than the nanoholes prepared by AFM oxidation. In contrast, when QDs are grown at T-g = 520 degrees C, the diameter of the QDs is limited by that of nanoholes and is almost unchanged with varying InAs supply. The single-layer QD array grown at 520 degrees C showed good optical properties and uniformities. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 23 条

[21] Effect of In-Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes
Shibata, K.
Jung, M.
Cha, K. M.
Sotome, M.
Hirakawa, K.
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (16)
[22] Semiconductor quantum light sources
Shields, Andrew J.
[J]. NATURE PHOTONICS, 2007, 1 (04) : 215 - 223
[23] Site-controlled photoluminescence at telecommunication wavelength from InAs/InP quantum dots
Song, HZ
Usuki, T
Hirose, S
Takemoto, K
Nakata, Y
Yokoyama, N
Sakuma, Y
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (11) : 1 - 3

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