Size-Limiting Effect of Site-Controlled InAs Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy

被引：4
作者：
Cha, Kyu Man [1 ]
Horiuchi, Isao [1 ]
Shibata, Kenji [1 ]
Hirakawa, Kazuhiko [1 ,2 ,3 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
[3] CREST JST, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 08期
基金：
日本学术振兴会;
关键词：
SINGLE-PHOTON SOURCES; LITHOGRAPHY; SYSTEM;
D O I：
10.1143/APEX.5.085501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the site-controlled growth of InAs quantum dots (QDs) by using atomic-force-microscope (AFM)-assisted anodic oxidation. It is found that the morphology of the site-controlled QDs strongly depends on the growth temperature, T-g; when QDs are grown at T-g <= 480 degrees C, the obtained QDs are much larger than the nanoholes prepared by AFM oxidation. In contrast, when QDs are grown at T-g = 520 degrees C, the diameter of the QDs is limited by that of nanoholes and is almost unchanged with varying InAs supply. The single-layer QD array grown at 520 degrees C showed good optical properties and uniformities. (C) 2012 The Japan Society of Applied Physics
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页数：3
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