Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

被引：73

作者：

Garg, Shelly ^{[1
]}

Saurabh, Sneh ^{[1
]}

机构：

[1] Indraprastha Inst Informat Technol, Dept ECE, Delhi, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷

关键词：

TFET; Drain pocket; Ambipolar current; Tunneling barrier width; BTBT; FIELD-EFFECT TRANSISTORS; N-I-N; PERFORMANCE; VOLTAGE; TFETS; IMPROVEMENT; MOSFETS;

D O I：

10.1016/j.spmi.2017.11.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demonstrate the superiority of the DP technique over the existing techniques in controlling the ambipolar current. In particular, the addition of DP to a TFET is able to fully suppress the ambipolar current even when TFET is biased at high negative gate voltages and drain doping is kept as high as the source doping. Moreover, adding DP is complementary to the well-known technique of employ-ing source-pocket (SP) in a TFET since both need similar doping type and doping concentration. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：261 / 270

页数：10

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