Structural, optical and optoelectrical analysis of a new window layer based on ZnAl2S4thin films

In this work, we report the manufacturing of neoteric window layers based on ternary chalcogenide ZnAl(2)S(4)films utilizing an inexpensive spray pyrolysis method for the first time. Three films (228 nm, 262 nm, and 319 nm) have been prepared. The X-ray diffraction was applied to check the cubic phase of the ZnAl(2)S(4)films. The morphology analysis depicted that the 262 nm film has the lowest porosity and roughness as compared with other films. This affects its refractive index values which correspondingly sheds an impact on its optical/optoelectrical parameters. ZnAl(2)S(4)films revealed the n-type conductivity and this has been confirmed via the hot-probe experiment. Furthermore, our results displayed that the ZnAl(2)S(4)thin films exhibited a wide energy gap in the extent of 3.68-4.01 eV along with good optical conductivity. Hence, the ZnAl(2)S(4)films could be a suitable new economic window layer in solar cells. Besides, the 319 nm film has presented a prominent enlargement in the nonlinear optical parameters as compared to other inspected films which could be a good sign of utilizing this material in nonlinear optical devices.