Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit

被引：41

作者：

Kilchytska, V. ^{[1
]}

Arshad, M. K. Md ^{[1
,2
]}

Makovejev, S. ^{[3
]}

Olsen, S. ^{[3
]}

Andrieu, F. ^{[4
]}

Poiroux, T. ^{[4
]}

Faynot, O. ^{[4
]}

Raskin, J. -P. ^{[1
]}

Flandre, D. ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM Inst, Louvain, Belgium

[2] Univ Malaysia Perlis, Sch Microelect Engn, Kangar, Malaysia

[3] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne, Tyne & Wear, England

[4] CEA Leti, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2012年 / 70卷

关键词：

Ultra-thin body FD SOI MOSFETs; Ultra-thin BOX; Analog figures of merit; Cut-off frequency; High-temperature; Output conductance; SIGNAL OUTPUT CONDUCTANCE; ON-NOTHING SON; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE; MOSFETS; GATE; PERFORMANCE; BEHAVIOR; DEVICES; FINFETS;

D O I：

10.1016/j.sse.2011.11.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150-220 GHz. Effect of operation regime, substrate bias, channel width and high temperature (up to 250 degrees C) on analog figures-of-merit (FoM) are analyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：50 / 58

页数：9

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