Single electron transport through individual InAs quantum dots

被引：0

作者：

Schmidt, KH ^{[1
]}

Versen, M ^{[1
]}

Kunze, U ^{[1
]}

Reuter, D ^{[1
]}

Wieck, AD ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Coulomb-blocked electron transport through individual InAs islands embedded in a lithographically defined constriction has been investigated. In contrast to the step like increase of the conductance in a dot-free sample, the characteristic of the point contact devices with dots show well resolved peaks reflecting Coulomb-blocked electron transport through the p-shell of only a view islands. From the gate voltage distance of adjacent tunneling features a Coulomb-Blockade energy of approximate to 10meV could be extracted.

引用

页码：1087 / 1088

页数：2

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