Effect of annealing temperature on physical and electrical properties of solution-processed polycrystalline In2Ga2ZnO7 thin film

被引：11

作者：

Kasim, Nabihah ^{[1
]}

Hassan, Zainuriah ^{[1
]}

Lim, Way Foong ^{[1
]}

Quah, Hock Jin ^{[1
]}

机构：

[1] Univ Sains Malaysia, Inst Nano Optoelect Res & Technol INOR, George Town 11800, Malaysia

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2020年 / 31卷 / 12期

关键词：

OPTICAL-PROPERTIES; CRYSTAL-GROWTH; ZNO; PHOTOLUMINESCENCE; TRANSISTORS; DEFECTS; LAYER;

D O I：

10.1007/s10854-020-03516-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Influence of annealing temperature on the properties of In2Ga2ZnO7 (IGZO) thin film prepared using sol-gel method was extensively studied. Annealing treatment at four different temperatures (300, 500, 700 and 900 degrees C) has transformed the amorphous IGZO to polycrystalline IGZO. The increase in annealing temperature to 900 degrees C encouraged the formation of interfacial layer on the underlying Si substrate. As a result, a decrement in film current conductivity was perceived and the sample annealed at 900 degrees C was determined as the closest to having insulating properties. More characterization regarding the structural, morphological and optical characteristics of the annealed films was discussed in this study.

引用

页码：9705 / 9718

页数：14

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