Isostructural metal-insulator transition in VO2

被引：209

作者：

Lee, D. ^{[1
]}

Chung, B. ^{[2
]}

Shi, Y. ^{[3
]}

Kim, G. -Y. ^{[4
,11
]}

Campbell, N. ^{[5
]}

Xue, F. ^{[3
]}

Song, K. ^{[4
]}

Choi, S. -Y. ^{[4
,11
]}

Podkaminer, J. P. ^{[1
]}

Kim, T. H. ^{[1
]}

Ryan, P. J. ^{[6
,7
]}

Kim, J. -W. ^{[6
]}

Paudel, T. R. ^{[8
,9
]}

Kang, J. -H. ^{[1
]}

Spinuzzi, J. W. ^{[10
]}

Tenne, D. A. ^{[10
]}

Tsymbal, E. Y. ^{[8
,9
]}

Rzchowski, M. S. ^{[5
]}

Chen, L. Q. ^{[3
]}

Lee, J. ^{[2
]}

Eom, C. B. ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[4] Korea Inst Mat Sci, Dept Mat Modeling & Characterizat, Chang Won 642831, South Korea

[5] Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USA

[6] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[7] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

[8] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[9] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[10] Boise State Univ, Dept Phys, Boise, ID 83725 USA

[11] POSTECH, Dept Mat & Sci, Pohang 37673, South Korea

来源：

SCIENCE | 2018年 / 362卷 / 6418期

基金：

新加坡国家研究基金会;

关键词：

MOTT TRANSITION; AB-INITIO; PHASE; FIELD; STRAIN; SUPPRESSION; PEIERLS; HUBBARD; SPECTRA; DRIVEN;

D O I：

10.1126/science.aam9189

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

引用

页码：1037 / +

页数：35

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