Micro-Light-Emitting Diodes Based on InGaN Materials with Quantum Dots

被引：22

作者：

Liu, Zhaojun ^{[1
]}

Hyun, Byung-Ryool ^{[1
]}

Sheng, Yujia ^{[1
,2
]}

Lin, Chun-Jung ^{[3
]}

Changhu, Mengyuan ^{[1
]}

Lin, Yonghong ^{[1
]}

Ho, Chih-Hsiang ^{[3
]}

He, Jr-Hau ^{[2
]}

Kuo, Hao-Chung ^{[4
]}

机构：

[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

[2] City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong 999077, Peoples R China

[3] Natl Chiao Tung Univ, Coll Elect & Comp Engn, Dept Photon & Inst Electroopt Engn, Hsinchu 30010, Taiwan

[4] Raysolut LLC, San Jose, CA 95129 USA

来源：

ADVANCED MATERIALS TECHNOLOGIES | 2022年 / 7卷 / 06期

关键词：

InGaN; micro-light-emitting diodes; quantum dots; III-V NITRIDE; A-PLANE GAN; HIGH-EFFICIENCY; COLOR CONVERTER; C-PLANE; DISPLAY; WELLS; EMISSION; LEDS; POLARIZATION;

D O I：

10.1002/admt.202101189

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Micro-light-emitting diodes (Micro-LEDs) based on gallium nitride (GaN) materials offer versatile platforms for various applications, including displays, data communication tools, photodetectors, and sensors. In particular, the introduction of Micro-LEDs in the optoelectronic industry enables the development of novel short-distance wireless communication applications for the Internet of Things as well as near-to-eye displays for virtual reality and augmented reality. Micro-LEDs used in conjunction with colloidal quantum dots (QDs) as color-conversion layers provide efficient full-color displays as well as white LEDs for high-speed visible light communications (VLCs). Here, the latest progress on full-color Micro-LED displays with a printed QD color conversion layer, GaN material-based Micro-LEDs for VLC systems, and the photostability of novel QD materials for Micro-LEDs is comprehensively reviewed. Outlooks on the efficiency of Micro-LEDs with sizes <= 10 mu m, QD stability issues, and flexible Micro-LED displays are also provided.

引用

页数：17

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