Coupling Effect of Temperature and Stress on the Electronic Behavior of Amorphous SiAlCO

被引：14

作者：

Cao, Yejie ^{[1
]}

Gao, Yan ^{[2
]}

Zhao, Ran ^{[1
]}

An, Linan ^{[1
,3
]}

机构：

[1] Univ Cent Florida, Dept Mat Sci & Engn, Adv Mat Proc & Anal Ctr, Orlando, FL 32816 USA

[2] Southwest Jiaotong Univ, Sch Mech & Engn, State Key Lab Tract Power, Chengdu 610031, Sichuan, Peoples R China

[3] Amer Ceram Soc, Westerville, OH 43081 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2016年 / 99卷 / 06期

基金：

美国国家科学基金会;

关键词：

amorphous; polymer precursor; semiconductors; POLYMER-DERIVED CERAMICS; SILICON CARBONITRIDE; PIEZORESISTIVITY; EVOLUTION;

D O I：

10.1111/jace.14260

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electric conductivity of polymer-derived amorphous silicoaluminum oxycarbide was measured as a function of temperature and pressure. The material exhibits typical amorphous semiconducting behavior, following band-tail hopping process. The characteristic temperature of the BTH process increases with increasing pressure, indicating that the density of states in the band-tail is changed by applying pressure. The piezoresistive stress coefficient of the material was calculated and increased with increasing temperature, which is different from other materials. It is found that such increase is due to the change in the characteristic temperature.

引用

页码：1881 / 1884

页数：4

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