Quantifying self-heating effects with scaling in globally strained Si MOSFETs

被引：17

作者：

Agaiby, Rimoon ^{[1
]}

Yang, Yang ^{[1
]}

Olsen, Sarah H. ^{[1
]}

O'Neill, Anthony G. ^{[1
]}

Eneman, Geert ^{[2
,3
,4
]}

Verheyen, Peter ^{[2
]}

Loo, Roger ^{[2
]}

Claeys, Cor ^{[2
,3
]}

机构：

[1] Univ Newcastle, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne, Tyne & Wear, England

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept ESAT INSYS, B-3001 Louvain, Belgium

[4] Res Assist Fund Sci Res, Flanders, Belgium

来源：

SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 11-12期

基金：

英国工程与自然科学研究理事会;

关键词：

strained Si; strain relaxed buffers; self-heating; scaling; thermal resistance; ac conductance;

D O I：

10.1016/j.sse.2007.09.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical results are presented for deep submicron strained Si MOSFETs fabricated on both thick and thin SiGe strain relaxed buffers, SRBs. For the first time thin SRB devices are shown to offer the same performance enhancements as thick SRB devices. The reduction in performance enhancement with device scaling widely reported in the literature has also been investigated. Correcting for dynamic self-heating effects using ac measurements, the enhancements seen in long channel devices are maintained down to short channel lengths, demonstrating the scalability of SRB technology. Thermal resistances have been measured experimentally and compared with analytical models. The thermal resistance for devices on the thin SRBs is reduced by 50% compared with devices on thick SRBs. Finally, a comparison of self-heating effects in MOSFETs fabricated on SOI and Si0.8Ge0.2 SRBs provides insight into the challenges ahead as power densities continue to increase. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1473 / 1478

页数：6

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