"Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation

被引：0
作者：
Li, Changfu [1 ,2 ]
Xu, Mingsheng [1 ]
Ji, Ziwu [1 ]
Shi, Kaiju [1 ]
Li, Hongbin [1 ]
Wei, Yehui [1 ]
Xu, Xiangang [3 ]
机构：
[1] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
[2] Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Shandong, Peoples R China
[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
MATERIALS EXPRESS | 2020年 / 10卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Double-W-Shape; InGaN/GaN Multiple-Quantum-Wells; Photoluminescence; Phase Separation; LIGHT-EMITTING-DIODES; LOCALIZATION STATES; CARRIER DYNAMICS; PHOTOLUMINESCENCE; PERFORMANCE;
D O I：
10.1166/mex.2020.1611
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The temperature dependence of the spectra of photoluminescence (PL) from a blue InGaN/GaN multiple-quantum-well (MQW) structure is investigated at lower excitation power. Two emission peaks, related to InGaN and assigned to In-rich quasi-quantum dots (QDs) and InGaN-matrix in the full PL spectrum, were observed. Upon increasing the temperature, both PL peak linewidths exhibited "double-W-shaped" (narrowing-broadening-narrowing-broadening-narrowing-broadening) temperature dependence. Combined with the observed features of the temperature dependences of the PL intensities, the temperature-dependent behaviors in this case can be interpreted as the relaxation and thermalization of carriers inside respective phase structures and the transfer of carriers between two phase structures, because of the strong phase separation and significant component fluctuation in the InGaN well layers.
引用
收藏
页码：140 / 144
页数：5
相关论文
共 26 条
  • [11] Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
    Li, X.
    Zhao, D. G.
    Yang, J.
    Jiang, D. S.
    Liu, Z. S.
    Chen, P.
    Zhu, J. J.
    Liu, W.
    He, X. G.
    Li, X. J.
    Liang, F.
    Zhang, L. Q.
    Liu, J. P.
    Yang, H.
    Zhang, Y. T.
    Du, G. T.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2016, 97 : 186 - 192
  • [12] Li X., 2017, CHIN PHYS, V26, DOI [10.1088/1674-1056/26/1/017805, DOI 10.1088/1674-1056/26/1/017805]
  • [13] InGaN/GaN nanorod array white light-emitting diode
    Lin, Hon-Way
    Lu, Yu-Jung
    Chen, Hung-Ying
    Lee, Hong-Mao
    Gwo, Shangjr
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (07)
  • [14] Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells
    Liu, W.
    Zhao, D. G.
    Jiang, D. S.
    Chen, P.
    Liu, Z. S.
    Zhu, J. J.
    Shi, M.
    Zhao, D. M.
    Li, X.
    Liu, J. P.
    Zhang, S. M.
    Wang, H.
    Yang, H.
    Zhang, Y. T.
    Du, G. T.
    [J]. OPTICS EXPRESS, 2015, 23 (12): : 15935 - 15943
  • [15] Effect of localization states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells
    Liu, Wei
    Zhao, De Gang
    Jiang, De Sheng
    Chen, Ping
    Liu, Zong Shun
    Zhu, Jian Jun
    Li, Xiang
    Shi, Ming
    Zhao, Dan Mei
    Liu, Jian Ping
    Zhang, Shu Ming
    Wang, Hui
    Yang, Hui
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (06):
  • [16] Lu H.Y., 2016, CHIN OPT LETT, V14
  • [17] InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
    Sheremet, V.
    Gheshlaghi, N.
    Sozen, M.
    Elci, M.
    Sheremet, N.
    Aydinli, A.
    Altuntas, I.
    Ding, K.
    Avrutin, V.
    Ozgur, U.
    Morkoc, H.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2018, 116 : 253 - 261
  • [18] White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer
    Sheu, JK
    Pan, CJ
    Chi, GC
    Kuo, CH
    Wu, LW
    Chen, CH
    Chang, SJ
    Su, YK
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (04) : 450 - 452
  • [19] Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
    Sun, Hu
    Ji, Ziwu
    Wang, Huining
    Xiao, Hongdi
    Qu, Shuang
    Xu, Xiangang
    Jin, Aizi
    Yang, Haifang
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (09)
  • [20] Green and blue emissions in phase-separated InGaN quantum wells
    Wang, Fan
    Ji, Ziwu
    Wang, Qiang
    Wang, Xuesong
    Qu, Shuang
    Xu, Xiangang
    Lv, Yuanjie
    Feng, Zhihong
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)
123