"Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation

被引:0
作者
Li, Changfu [1 ,2 ]
Xu, Mingsheng [1 ]
Ji, Ziwu [1 ]
Shi, Kaiju [1 ]
Li, Hongbin [1 ]
Wei, Yehui [1 ]
Xu, Xiangang [3 ]
机构
[1] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
[2] Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Shandong, Peoples R China
[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
Double-W-Shape; InGaN/GaN Multiple-Quantum-Wells; Photoluminescence; Phase Separation; LIGHT-EMITTING-DIODES; LOCALIZATION STATES; CARRIER DYNAMICS; PHOTOLUMINESCENCE; PERFORMANCE;
D O I
10.1166/mex.2020.1611
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The temperature dependence of the spectra of photoluminescence (PL) from a blue InGaN/GaN multiple-quantum-well (MQW) structure is investigated at lower excitation power. Two emission peaks, related to InGaN and assigned to In-rich quasi-quantum dots (QDs) and InGaN-matrix in the full PL spectrum, were observed. Upon increasing the temperature, both PL peak linewidths exhibited "double-W-shaped" (narrowing-broadening-narrowing-broadening-narrowing-broadening) temperature dependence. Combined with the observed features of the temperature dependences of the PL intensities, the temperature-dependent behaviors in this case can be interpreted as the relaxation and thermalization of carriers inside respective phase structures and the transfer of carriers between two phase structures, because of the strong phase separation and significant component fluctuation in the InGaN well layers.
引用
收藏
页码:140 / 144
页数:5
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