n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor

被引：3

作者：

Alivov, Ya I. ^{[1
]}

Fan, Q. ^{[1
]}

Ni, X. ^{[1
]}

Chevtchenko, S. ^{[1
]}

Bhat, I. B. ^{[2
]}

Morkoc, H. ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[2] Rennsselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

MICROELECTRONICS RELIABILITY | 2010年 / 50卷 / 12期

关键词：

GAN;

D O I：

10.1016/j.microrel.2010.06.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heterojunction bipolar transistor (HBTs) based on Al0.15Ga0.85 N/6H-SiC heterojunction was fabricated. Room-temperature current-voltage (I-V) characteristics of n-Al0.15Ga0.85 N/p-6H-SiC emitter-base heterojunction exhibited good rectifying behavior with a forward current 5 x 10(-2) A and reverse current 3 x 10(-9) A at 10 V and -10 V, respectively. Analysis of the temperature dependent I-V characteristics of this heterojunction revealed a barrier height of 1.1 eV. The fabricated n-Al0.15Ga0.85 N/p-SiC/n-SiC bipolar transistor did not exhibit common-emitter operation, however, common-base operation was observed with current gain beta = IC/IB ranging in 75-100. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：2090 / 2092

页数：3

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