Electrical and optical properties of iodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy

被引：7

作者：

Yasuda, K ^{[1
]}

Kojima, K ^{[1
]}

Mori, K ^{[1
]}

Kubota, Y ^{[1
]}

Nimura, T ^{[1
]}

Inukai, F ^{[1
]}

Asai, Y ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 466, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 06期

关键词：

CdZnTe; electrical properties; iodine doping; metalorganic vapor phase epitaxy (MOVPE); photoluminescence (PL);

D O I：

10.1007/s11664-998-0009-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical and photoluminescence properties of iodine doped CdZnTe (CZT) layers grown by metalorganic vapor phase epitaxy have been studied. Doped layers showed an n-type conductivity from the Zn composition x = 0 (CdTe) to 0.07. Above x = 0.07, resistivities of doped layers increased steeply up to 10(6) Ohm-cm. Resistivities of doped CZT layers were higher than those of undoped layers above x = 0.6. Photoluminescence intensity of doped layers increased compared to undoped layers. Doped CdTe and ZnTe layers showed neutral donor bound exciton emission lines at the exciton related region. Also, these layers showed an increase in emission intensity at the donor acceptor pair recombination bands. Sharp emission lines were observed in doped CZT layers at around 1.49 eV. These emission lines were considered to be originated from GaAs substrates which were optically excited by the intense emission from doped CZT layers.

引用

页码：527 / 531

页数：5

共 16 条

[1] EVIDENCE FOR GAAS SUBSTRATE STRAIN CAUSED BY A CDTE EPITAXIAL LAYER [J].

ARCH, DK ;

SCHMIT, JL ;

HORNING, RN ;

STAUDENMANN, JL .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :149-154

[2] MECHANISM OF ARSENIC INCORPORATION AND ELECTRICAL-PROPERTIES IN CDTE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

EKAWA, M ;

YASUDA, K ;

FERID, T ;

SAJI, M ;

TANAKA, A .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (06) :2669-2674

[3] PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ZNTE/GAAS EPILAYERS GROWN BY HOT-WALL EPITAXY [J].

KUDLEK, G ;

PRESSER, N ;

GUTOWSKI, J ;

HINGERL, K ;

ABRAMOF, E ;

SITTER, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) :A90-A95

[4] SELECTIVE EXCITATION OF AN ASSOCIATE DONOR-ACCEPTOR PAIR COMPLEX IN IODINE-DOPED CDTE [J].

LEE, J ;

GILES, NC ;

SUMMERS, CJ .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4544-4547

[5] Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies [J].

Lovergine, N ;

Longo, M ;

Prete, P ;

Gerardi, C ;

Calcagnile, L ;

Cingolani, R ;

Mancini, AM .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) :685-692

[6]

MADELUNG O, 1987, LANDOLTBORNSTEIN A, V22

[7] OPTOELECTRONIC PROPERTIES OF CD1-XZNXTE FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J].

OLEGO, DJ ;

FAURIE, JP ;

SIVANANTHAN, S ;

RACCAH, PM .

APPLIED PHYSICS LETTERS, 1985, 47 (11) :1172-1174

[8] PHOTOLUMINESCENCE STUDY OF CARBON DOPED GALLIUM-ARSENIDE [J].

OZEKI, M ;

NAKAI, K ;

DAZAI, K ;

RYUZAN, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) :1121-1126

[9] DETERMINATION OF THE DEPENDENCE OF THE BAND-GAP ENERGY ON COMPOSITION FOR CD1-XZNXTE [J].

RENO, JL ;

JONES, ED .

PHYSICAL REVIEW B, 1992, 45 (03) :1440-1442

[10] DX centres in CdZnTe:Cl and their applications [J].

Thio, T ;

Bennett, JW ;

Chadi, DJ ;

Linke, RA ;

Becla, P .

JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :345-349

← 1 2 →