Design of temperature compensation for silicon-sapphire pressure sensor

被引：0

作者：

Huang Manguo ^{[1
]}

Liu Defeng ^{[1
]}

Lu Chao ^{[2
]}

Guo Zhanshe ^{[2
]}

Li Xin ^{[1
]}

机构：

[1] AVIC Beijing Changcheng Aeronaut Measurement & Co, Adv Sensor Technol Ctr, Aviat Key Lab Sci & Technol Special Condit Monito, Beijing, Peoples R China

[2] Beihang Univ, Sch Instrument Sci & Optoelect Engn, State Key Lab Virtual Real Technol & Syst, Beijing, Peoples R China

来源：

2017 IEEE INTERNATIONAL CONFERENCE ON IMAGING SYSTEMS AND TECHNIQUES (IST) | 2017年

关键词：

temperature compensation; high temperature; pressure sensors; silicon on sapphire;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to solve the problem that the temperature drift of the silicon-on-sapphire pressure sensor is too large to reduce the accuracy of pressure measurement at high temperature, a temperature compensation scheme based on a single chip is proposed. The temperature of the working environment is obtained by a PT100, and integrated with the output of pressure sensor to calculate the compensated pressure sensor. Problems of power supply and signal acquisition are solved by the high precision, low drift voltage and current references, programmable amplifiers and high precision ADCs on chip. According to the working characteristics of the silicon-on-sapphire pressure sensor, an efficient temperature compensation algorithm is designed, and written to the on-chip ARM processor. The experimental results show that the maximum measurement error of pressure in the temperature range of -20 similar to 250 degrees C and measurement range of 0 similar to 28 MPa is 8.37%FS before compensation and reduced to 0.3%FS after compensation. The accuracy of the sensor is greatly improved by the compensation system.

引用

页码：214 / 218

页数：5