Quaternary n-Al0.08In0.08Ga0.84N/p-Si-based solar cell

被引：7

作者：

Ghazai, Alaa J. ^{[1
]}

Aziz, Wisam J. ^{[2
]}

Abu Hassan, H. ^{[1
]}

Hassan, Z. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res & Technol Lab, George Town 11800, Malaysia

[2] Al Mustansiryah Univ, Dept Phys, Baghdad, Iraq

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2012年 / 51卷 / 04期

关键词：

Quaternary n-Al0.08In0.08Ga0.84N; Piezoelectricity; Solar cells; Anti-reflection coating; Conversion efficiency;

D O I：

10.1016/j.spmi.2012.01.011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Quaternary n-type Al0.08In0.08Ga0.84N grown on p-Si using molecular beam epitaxy technique was fabricated as a pn-junction and an anti-reflection coating (ARC) of solar cells. The structural properties and surface morphology of the solar cells were investigated using scanning electron and atomic force microscopy. Optical reflectance was obtained using an optical reflectometery system (Filmetric F20-VIS). Current-voltage characteristics were examined under 100 mW cm(-2) illumination conditions. Quaternary n-type Al0.08In0.08Ga0.84N coating was found to be an excellent ARC against incident light compared with other ARCs. This material also exhibited good light trapping over a wide wavelength spectrum, which produced highly efficient solar cells. The unique and strong polarization, as well as the piezoelectric effect, of the quaternary-nitrides was employed to reduce surface recombination velocities and enhance the solar cell performance. A solar cell with reasonable conversion efficiency of 9.74% was obtained when the n-Al0.08In0.08Ga0.84N/p-Si was employed. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：480 / 485

页数：6

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