Surface reactivity measurements for OH radicals during deposition of SiO2 from tetraethoxysilane/O-2 plasmas

被引：18

作者：

Bogart, KHA ^{[1
]}

Cushing, JP ^{[1
]}

Fisher, ER ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT CHEM,FT COLLINS,CO 80523

来源：

CHEMICAL PHYSICS LETTERS | 1997年 / 267卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0009-2614(97)00109-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface reactivity of OH radicals has been measured during plasma deposition of SiO2 from tetraethoxysilane (TEOS)-based plasmas by the Imaging of Radicals Interacting with Surfaces (IRIS) method. This technique combines molecular beam and plasma technologies with spatially-resolved laser-induced fluorescence to provide two dimensional images of radical species during surface modification. OH radicals were not detected in a 100% TEOS plasma, but were observed in 20% TEOS/80% O-2 plasmas. The reactivity of OH is measured as 0.40 +/- 0.10 while depositing SiO2 on a 300 K Si substrate. This intermediate reactivity indicates that OH may play a role in formation of SiO2 films.

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收藏

页码：377 / 383

页数：7

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