Optoelectronic behaviors and carrier dynamics of individual localized luminescent centers in InGaN quantum-well light emitting diodes

被引：14

作者：

De, Suman ^{[1
]}

Das, Dibyendu Kumar ^{[2
]}

Layek, Arunasish ^{[1
]}

Raja, Archana ^{[1
]}

Singh, Manoj Kumar ^{[3
]}

Bhattacharya, Arnab ^{[4
]}

Dhar, Subhabrata ^{[5
]}

Chowdhury, Arindam ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Chem, Bombay 400076, Maharashtra, India

[2] Indian Assoc Cultivat Sci, Dept Phys Chem, Kolkata 700032, India

[3] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Bombay 400085, Maharashtra, India

[4] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India

[5] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

关键词：

EXCITON LOCALIZATION; SINGLE;

D O I：

10.1063/1.3671092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatially, spectrally, and temporally resolved photoluminescence (PL) microscopy was performed on InGaN quantum-well light emitting diodes to probe individual localized luminescent centers arising from disorder induced potential fluctuations. Two energetically distinct localization centers were identified where the photoemission quantum-efficiency (QE) are correlated to the transition energies. PL lifetime measurements on emission centers suggest that activation barrier for non-radiative recombination (NR) processes determines their QE. The disparity in carrier dynamics not only substantiate two diverse mechanisms for localization processes, but also indicate the presence of multiple NR channels even within the trap centers implying their lateral dimensions to span several nanometers. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671092]

引用

页数：4

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