Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs

被引：4

作者：

Schmidbauer, M. ^{[1
]}

Ugur, A. ^{[2
]}

Wollstein, C. ^{[2
]}

Hatami, F. ^{[2
]}

Katmis, F. ^{[2
]}

Caha, O. ^{[3
]}

Masselink, W. T. ^{[2
]}

机构：

[1] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[2] Univ Berlin, Inst Phys, D-12489 Berlin, Germany

[3] Masaryk Univ, Brno 61137, Czech Republic

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 02期

关键词：

LAYERS; ENHANCEMENT; GAINP; DOTS;

D O I：

10.1063/1.3677995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52 P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry. Comparing samples with differing In0.48Ga0.52 P thickness shows that the corrugations are not detectable for a 10-nm film, but develop gradually for thicker films. Very pronounced corrugations are well developed for 200-nm thick films and are associated with a lateral strain field and enhanced In composition. The data support a lateral compositional modulation as the cause of the corrugations. (C) 2012 American Institute of Physics. [doi:10.1063/1.3677995]

引用

页数：5

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