Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor

被引：10

作者：

Baek, Jinwook ^{[1
]}

Novak, Travis G. ^{[1
]}

Kim, Houngkyung ^{[1
]}

Lee, Jinsup ^{[1
]}

Jang, Byoungwook ^{[1
]}

Lee, Junseok ^{[1
]}

Jeon, Seokwoo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 335 Gwahangno, Daejeon 305701, South Korea

来源：

NANO CONVERGENCE | 2017年 / 4卷

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1186/s40580-017-0130-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we present the experimental investigation on the contact resistance of graphene/single-walled carbon nanotube (SWCNT) junction using transfer length method with the simple equivalent circuit model. We find that p-n like junctions are formed in graphene/SWCNT transistors, and the contact resistance in the junction is observed to be similar to 494 and similar to 617 k ohm in case of metallic SWCNT (m-SWCNT) and semiconducting SWCNT (s-SWCNT), respectively. In addition, the contact resistance increases from 617 to 2316 k ohm as V-g increases from - 30 to - 10 V. Through our study, high carrier density induced from doping in both graphene and SWCNT leads to low contact resistance. This development of contact engineering, namely modulation of carrier density in the junction and contact length (L-con) scaling shows the potential for all-carbon based electronics.

引用

页数：6

共 17 条

[1] Transparent and flexible carbon nanotube transistors [J].

Artukovic, E ;

Kaempgen, M ;

Hecht, DS ;

Roth, S ;

GrUner, G .

NANO LETTERS, 2005, 5 (04) :757-760

[2] The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors [J].

Chen, ZH ;

Appenzeller, J ;

Knoch, J ;

Lin, YM ;

Avouris, P .

NANO LETTERS, 2005, 5 (07) :1497-1502

[3] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[4] Graphene: Status and Prospects [J].

Geim, A. K. .

SCIENCE, 2009, 324 (5934) :1530-1534

[5] High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes [J].

Kang, Seong Jun ;

Kocabas, Coskun ;

Ozel, Taner ;

Shim, Moonsub ;

Pimparkar, Ninad ;

Alam, Muhammad A. ;

Rotkin, Slava V. ;

Rogers, John A. .

NATURE NANOTECHNOLOGY, 2007, 2 (04) :230-236

[6] Electrical contacts to carbon nanotubes down to 1 nm in diameter [J].

Kim, W ;

Javey, A ;

Tu, R ;

Cao, J ;

Wang, Q ;

Dai, HJ .

APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3

[7] Strengthening effect of single-atomic-layer graphene in metal-graphene nanolayered composites [J].

Kim, Youbin ;

Lee, Jinsup ;

Yeom, Min Sun ;

Shin, Jae Won ;

Kim, Hyungjun ;

Cui, Yi ;

Kysar, Jeffrey W. ;

Hone, James ;

Jung, Yousung ;

Jeon, Seokwoo ;

Han, Seung Min .

NATURE COMMUNICATIONS, 2013, 4

[8] Simultaneously grown single wall carbon nanotube channel and electrodes in a thin film transistor [J].

Lee, Jinsup ;

Kim, Bo-Hyun ;

Kang, Seong Jun ;

Hyun, Kar Tham ;

Lee, Seok-Hee ;

Jeon, Seokwoo .

MRS COMMUNICATIONS, 2012, 2 (03) :79-83

[9] Ballistic transport in metallic nanotubes with reliable Pd ohmic contacts [J].

Mann, D ;

Javey, A ;

Kong, J ;

Wang, Q ;

Dai, HJ .

NANO LETTERS, 2003, 3 (11) :1541-1544

[10] Evidence of edge conduction at nanotube/metal contact in carbon nanotube devices [J].

Nosho, Yosuke ;

Ohno, Yutaka ;

Kishimoto, Shigeru ;

Mizutani, Takashi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (17-19) :L474-L476

← 1 2 →