Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

被引：35

作者：

Tallarida, M. ^{[1
]}

Adelmann, C. ^{[2
]}

Delabie, A. ^{[2
]}

Van Elshocht, S. ^{[2
]}

Caymax, M. ^{[2
]}

Schmeisser, D. ^{[1
]}

机构：

[1] Brandenburg Tech Univ Cottbus, Angew Phys Sensor, D-03046 Cottbus, Germany

[2] IMEC, B-3001 Heverlee, Belgium

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 04期

关键词：

ATOMIC LAYER DEPOSITION; OXIDE; INTERFACES; AL2O3;

D O I：

10.1063/1.3615784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The removal of the native oxides from NH(4)OH-cleaned p-GaAs (100) by exposure to trimethyl-aluminum (TMA) was studied by in situ photoelectron spectroscopy using synchrotron radiation. The reduction of high-valence As- and Ga-oxides occurred through different routes: while As(3+) was reduced to As((1 +/-Delta)+) suboxides (with 0 <= Delta <= 1), Ga(3+) was directly removed. The surface Fermi level was shifted by about 100 meV towards the valence band edge upon TMA exposure. This indicates that removing the native oxide of GaAs by TMA is insufficient to create interfaces between GaAs and Al(2)O(3) with defects densities below the 10(12) cm(-2) range. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615784]

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页数：3

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