The Radiation-Hardened Instrumentation Amplifier Based on the Differential Difference Operational Amplifier for BiJFET Technological Process

被引：0

作者：

Titov, A. E. ^{[1
]}

Prokopenko, N. N. ^{[2
]}

Zhebrun, E. A. ^{[1
]}

Butyrlagin, N. V. ^{[2
]}

机构：

[1] Southern Fed Univ, Rostov Na Donu, Russia

[2] Don State Tech Univ, Rostov Na Donu, Russia

来源：

PROCEEDINGS OF 2015 IEEE EAST-WEST DESIGN & TEST SYMPOSIUM (EWDTS) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reviews the design outputs of the radiation-hardened instrumentation amplifier (IA) based on the differential difference operational amplifier (DDOA) with low common-mode gain (GCM). The small values of GCM are provided by the introduction of the negative feedback on the inphase signal (IS) into DDOA. It is shown that, unlike the conventional circuits, IA of this subclass enables to minimize the effect of its resistive elements on GCM. The simulation results of the IA microcircuit, implemented on the components of the radiation-hardened analog gate-array master chip (AGAMC), are given. The applicability of the matrix array R-2R for the digital control by the differential gain (GD) of IA is shown.

引用

页数：4

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