Theoretical and experimental principles of the differential-integral triple-crystal X-ray diffractometry of imperfect single crystals

被引:0
|
作者
Molodkin, VB
Nemoshkalenko, VV
Olikhovskii, SI
Kislovskii, EN
Reshetnyk, OV
Vladimirova, TP
Krivitsky, VP
Machulin, VF
Prokopenko, IV
Ice, GE
Larson, BC
机构
[1] NASU, GV Kurdyumov Inst Mst Phys, UA-252680 Kiev 142, Ukraine
[2] NASU, Inst Semicond Phys, UA-252028 Kiev, Ukraine
[3] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
来源
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 1998年 / 20卷 / 11期
关键词
X-ray diffractometry; single crystals; defects; diffuse and coherent scattering;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The proposed new method of the differential-integral triple-crystal X-ray diffractometry of imperfect single crystals is justified theoretically and experimentally. The principles of the work of triple-crystal diffractometer (TCD) in the differential mode of measurements are described. Original construction and scheme of the universal TCD created in IMPh, N.A.S. of the Ukraine with the aim of realization of the proposed method are shown. In the Bragg case of X-ray diffraction by single crystals containing homogeneously distributed bounded defects, the relationships are obtained that establish the analytical relation between the ratio of the integrated intensities of diffuse and coherent TCD peaks from the investigated crystal, namely, the ratio of the differential diffuse and coherent scattering intensities both integrated over the Ewald sphere near the reciprocal lattice point and the characteristics of various kind defects. The obtained relationships are applied to the highly informative characterization of defects by using the angular dependences of the integral parameters of TCD intensity profiles measured from the silicon single crystal, which contains chaotically distributed new phase particles. The advantages of the proposed modification of TCD method are discussed.
引用
收藏
页码:29 / 40
页数:12
相关论文
共 50 条
  • [1] X-ray triple-crystal diffractometry of defects in epitaxic layers
    Holy, V., 1600, Int Union of Crystallography, Copenhagen, Denmark (27):
  • [2] X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY OF DEFECTS IN EPITAXIAL LAYERS
    HOLY, V
    WOLF, K
    KASTNER, M
    STANZL, H
    GEBHARDT, W
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1994, 27 : 551 - 557
  • [3] The analytical description of diffuse peaks on profiles of triple-crystal X-ray diffractometry from single crystals with microdefects
    Shpak, AP
    Molodkin, VB
    Olikhovs'ky, SJ
    Kyslovs'ky, YM
    Reshetnyk, OV
    Vladimirova, TP
    Barabash, RI
    Grigoriev, DO
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2005, 27 (09): : 1223 - 1236
  • [4] Effect of defects in the monochromator on profiles of a triple-crystal x-ray diffractometry
    Kyslovskyy, E. M.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Molodkin, V. B.
    Olikhovskii, S. J.
    Sheludchenko, B. V.
    Seredenko, R. F.
    Skakunova, O. S.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2007, 29 (05): : 701 - 710
  • [5] CHARACTERIZATION OF BORON IMPLANTED SILICON BY X-RAY TRIPLE-CRYSTAL DIFFRACTOMETRY
    ZAUMSEIL, P
    WINTER, U
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 120 (01): : 67 - 75
  • [6] Double- and triple-crystal X-ray diffractometry of microdefects in silicon
    Molodkin, V. B.
    Olikhovskii, S. I.
    Kyslovskyy, Ye. M.
    Len, E. G.
    Reshetnyk, O. V.
    Vladimirova, T. P.
    Lizunov, V. V.
    Lizunova, S. V.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2010, 13 (04) : 353 - 356
  • [7] ON THE INCREASED SENSITIVITY OF X-RAY ROCKING CURVE MEASUREMENTS BY TRIPLE-CRYSTAL DIFFRACTOMETRY
    ZAUMSEIL, P
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 91 (01): : K31 - K33
  • [8] Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry
    Lomov, A. A.
    Prokhorov, D. Yu.
    Imamov, R. M.
    Nohavica, D.
    Gladkov, P.
    CRYSTALLOGRAPHY REPORTS, 2006, 51 (05) : 754 - 760
  • [9] X-RAY DOUBLE AND TRIPLE-CRYSTAL DIFFRACTOMETRY OF MOSAIC STRUCTURE IN HETEROEPITAXIAL LAYERS
    HOLY, V
    KUBENA, J
    ABRAMOF, E
    LISCHKA, K
    PESEK, A
    KOPPENSTEINER, E
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1736 - 1743
  • [10] Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry
    A. A. Lomov
    D. Yu. Prokhorov
    R. M. Imamov
    D. Nohavica
    P. Gladkov
    Crystallography Reports, 2006, 51 : 754 - 760