The influence of high-temperature annealing on SiC Schottky diode characteristics

被引：13

作者：

Zhang, Q ^{[1
]}

Sudarshan, TS ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 11期

关键词：

annealing; SiC; Schottky diodes; barrier inhomogeneities;

D O I：

10.1007/s11664-001-0203-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of high temperature (up to 800 degreesC) annealing on the current-voltage characteristics of n-type 6H-SiC Schottky diodes is presented. Our experimental results indicate that high-temperature annealing can result in the improvement of the forward and reverse electrical characteristics of SiC Schottky diodes by repairing any leaky low barrier secondary diode parallel to the primary diode that may be present due to the barrier inhomogeneities at the Schottky contact interface.

引用

页码：1466 / 1470

页数：5

共 11 条

[1] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES
BHATNAGAR, M
BALIGA, BJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 645 - 655
[2] Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers
Defives, D
Noblanc, O
Dua, C
Brylinski, C
Barthula, M
Aubry-Fortuna, V
Meyer, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) : 449 - 455
[3] Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
Itoh, A
Kimoto, T
Matsunami, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) : 139 - 141
[4] Breakdown voltage improvement of 4H-SiC Schottky diodes by a thin surface implant
Khemka, V
Chatty, K
Chow, TP
Gutmann, RJ
[J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1211 - 1214
[5] PROGRESS IN SILICON-CARBIDE SEMICONDUCTOR ELECTRONICS TECHNOLOGY
NEUDECK, PG
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 283 - 288
[6] The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC
Rastegaeva, MG
Andreev, AN
Petrov, AA
Babanin, AI
Yagovkina, MA
Nikitina, IP
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 254 - 258
[7] High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination
Saxena, V
Su, JN
Steckl, AJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) : 456 - 464
[8] Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
Schoen, KJ
Woodall, JM
Cooper, JA
Melloch, MR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) : 1595 - 1604
[9] SPELLMAN LM, 1992, AMORPHOUS CRYSTALLIN, V4, P417
[10] ELECTRON-TRANSPORT OF INHOMOGENEOUS SCHOTTKY BARRIERS - A NUMERICAL STUDY
SULLIVAN, JP
TUNG, RT
PINTO, MR
GRAHAM, WR
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) : 7403 - 7424

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